to-25 to-25 to-25 to-25 2 2 2 2 plastic-encapsulate plastic-encapsulate plastic-encapsulate plastic-encapsulate transistors transistors transistors transistors 4N60 4N60 4N60 4N60 mosfet(n-channel) features features features features robust high voltage terminrtion avalanche energy specified source-to-drain diode recovery time comparable to a discrete fast recovery diode diode is characterrized for use in bridge circuits maximum maximum maximum maximum ratings ratings ratings ratings (ta=25 unless otherwise noted) symbol symbol symbol symbol ? parameter parameter parameter parameter ? value value value value ?? units units units units v v v v ds ds ds ds drain-source voltage 600 v v v v v gs gs gs gs gate-source voltage 30 v i i i i d d d d drain current-continuous 4 a p p p p d d d d maximum power dissipation 2 w e e e e as as as as single pulse avalanche energy 80 mj t t t t j j j j , , , , tstg tstg tstg tstg operating junction and storage temperature range -55-150 electrical electrical electrical electrical characteristics characteristics characteristics characteristics (tamb=25 unless otherwise specified) parameter parameter parameter parameter symbol symbol symbol symbol test test test test conditions conditions conditions conditions min min min min typ typ typ typ max max max max unit unit unit unit drain-source breakdown voltage v (br)dss v gs =0v,i d =250ua 600 v zero gate voltage drain current i dss v ds =600v, v gs = 0 v 10 ua gate-body leakage i gss v ds =0v, v gs = 30v 100 na gate-threshold voltage vth (gs) v ds = v gs, i d =250 ua 2 4 v drain-source on-resistance r ds(on) v gs =10v, i d =2a 4 diode forward voltage (note3) v sd v gs =0 v , i d =4 a 1.5 v input capacitance ciss v ds =25v, v gs = 0 v, f=1mhz 540 pf output capacitance coss 125 reverse transfer capacitance crss 8.0 product specification 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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